Ultrasonic and Megasonic Particle Removal
نویسندگان
چکیده
Particulate surface contamination is one of the major causes of low yields in the semiconductor and other affected industries. The theory of low frequency (ultrasonic) and high frequency (megasonic) cleaning will be presented. Ultrasonic cleaning (less than 100 kHz) is relevant to cleaning of optics and precision parts. Megasonic cleaning (0.8 to 1.2 MHz) is used in semiconductor manufacturing. Experimental results for both types of cleaning, using semiconductor wafers, will be presented. Effects of varying operational parameters such as sonication time, and solution chemistry are shown. Effects of different particle composition and size challenges upon removal efficiency are also shown and discussed in terms of theory. Results indicate a strong dependence upon particle size and composition. Removal is also shown to be higher in SC1 than in water. Emphasis will be placed upon cleaning of semiconductor (Si) wafers, but concepts can be applied to cleaning of other parts as well.
منابع مشابه
Characterization of transient cavitation in gas sparged solutions exposed to megasonic field using cyclic voltammetry
0167-9317/$ see front matter 2011 Elsevier B.V. A doi:10.1016/j.mee.2011.11.013 ⇑ Corresponding author. E-mail address: [email protected] (S. Raghavan) The application of megasonic energy in semiconductor cleaning solutions has been shown to be very effective in improving the particle removal efficiency (PRE). There has been a significant interest in understanding the phenomena of cavitation ...
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